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? auirf7379q v dss 30v r ds(on) typ. 0.038 ?? i d 5.8a -30v 0.070 ?? -4.3a n-ch p-ch max. 0.045 ?? 0.090 ?? description specifically designed for automotive applications, these hexfet? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these automotive qualified hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repet itive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. features ? advanced planar technology ? low on-resistance ? logic level gate drive ? dual n and p channel mosfet ? surface mount ? available in tape & reel ? 150c operating temperature ? lead-free, rohs compliant ? automotive qualified * 1 2015-9-30 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units n-channel p-channel v ds drain-source voltage 30 -30 v i d @ t a = 25c continuous drain current, v gs @ 10v 5.8 -4.3 a ? i d @ t a = 70c continuous drain current, v gs @ 10v 4.6 -3.4 i dm pulsed drain current ? 46 -34 p d @t a = 25c maximum power dissipation 2.5 w linear derating factor 0.02 v gs gate-to-source voltage 20 ? v dv/dt peak diode recovery dv/dt ? 5.0 -5.0 v/ns t j operating junction and -55 to + 150 c ? t stg storage temperature range w/c absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units c/w r ? ja junction-to-ambient ( pcb mount, steady state) ? ??? 50 so-8 auirf7379q base part number package type standard pack orderable part number form quantity auirf7379q so-8 tape and reel 4000 AUIRF7379QTR g d s gate drain source d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 p-channel mosfet n-channel mosfet
? auirf7379q 2 2015-9-30 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage n-ch 30 ??? ??? v v gs = 0v, i d = 250a p-ch -30 ??? ??? v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient n-ch ??? 0.032 ??? v/c reference to 25c, i d = 1ma p-ch ??? -0.037 ??? reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance n-ch ??? 0.038 0.045 ???? v gs = 10v, i d = 5.8a ? ??? 0.055 0.075 v gs = 4.5v, i d = 4.9a ? p-ch ??? 0.070 0.090 v gs = -10v, i d = -4.3a ? ??? 0.130 0.180 v gs = -4.5v, i d = -3.7a ? v gs(th) gate threshold voltage n-ch 1.0 ??? 3.0 v v ds = v gs , i d = 250a p-ch -1.0 ??? -3.0 v ds = v gs , i d = -250a gfs forward trans conductance n-ch 5.2 ??? ??? s v ds = 15v, i d = 2.4a ? p-ch 2.5 ??? ??? v ds = -24v, i d = -1.8a ? i dss ? drain-to-source leakage current ? n-ch ??? ??? 1.0 a ? v ds =24v, v gs = 0v p-ch ??? ??? -1.0 v ds = -24v,v gs = 0v ? n-ch ??? ??? 25 v ds =24v, v gs = 0v ,t j = 125c p-ch ??? ??? -25 v ds = -24v,v gs = 0v,t j = 125c ? i gss ? gate-to-source forward leakage n-p ??? ??? 100 na ? v gs = 20v ? gate-to-source reverse leakage n-p ??? ??? 100 v gs = 20v ? dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge n-ch ??? ??? 25 nc ? n-channel p-ch ??? ??? 25 i d = 2.4a, v ds = 24v,v gs = 10v q gs gate-to-source charge n-ch ??? ??? 2.9 ???????????????? p-ch ??? ??? 2.9 p-channel q gd gate-to-drain charge n-ch ??? ??? 7.9 i d = -1.8a,v ds = -24v,v gs = -10v p-ch ??? 9.0 t d(on) turn-on delay time n-ch ??? 6.8 ??? ns ? n-channel p-ch ??? 11 ??? v dd = 15v,i d = 2.4a,r g = 6.0 ??? t r rise time n-ch ??? 21 ??? r d = 6.2 ?? p-ch ??? 17 ??? ????????????????? t d(off) turn-off delay time n-ch ??? 22 ??? p-channel p-ch ??? 25 ??? v dd = -15v,i d = -1.8a,r g = 6.0 ??? t f ? fall time ? n-ch ??? 7.7 ??? r d = 8.2 ?? p-ch ??? 18 ? l d internal drain inductance n-p ??? 4.0 ??? nh ?? between lead,6mm (0.25in.)from l s internal source inductance n-p ??? 6.0 ??? package and center of die contact c iss input capacitance n-ch ??? 520 ??? pf ? n-channel p-ch ??? 440 ??? v gs = 0v,v ds = 25v,? = 1.0mhz c oss output capacitance n-ch ??? 180 ??? ???????????????? p-ch ??? 200 ??? p-channel c rss reverse transfer capacitance n-ch ??? 72 ??? v gs = 0v,v ds = -25v,? = 1.0mhz p-ch ??? 93 ??? diode characteristics ? parameter min. typ. max. units conditions i s ? continuous source current (body diode) n-ch ??? ??? 3.1 a ? p-ch ??? ??? -3.1 i sm ? pulsed source current n-ch ??? ??? 46 (body diode) ??? p-ch ??? ??? -34 v sd diode forward voltage n-ch ??? ??? 1.0 t j = 25c,i s = 1.8a,v gs = 0v ?? p-ch ??? ??? -1.0 t j = 25c,i s = -1.8a,v gs = 0v ?? t rr reverse recovery time n-ch ??? 47 71 ns n-channel p-ch ??? 53 80 t j = 25c ,i f = 2.4a, di/dt = 100a/s q rr reverse recovery charge n-ch ??? 56 84 nc p-channel ? p-ch 66 99 t j = 25c,i f = -1.8a, di/dt = 100a/s v notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ?? n-channel i sd ?? 2.4a, di/dt ?? 73a/s, v dd ?? v (br)dss , t j ? 150c. p-channel i sd ?? -1.8a, di/dt ?? 90a/s, v dd ?? v (br)dss , t j ? 150c. ? pulse width ?? 300s; duty cycle ? 2%. ? surface mounted on fr-4 board , t ??? 10sec.
? auirf7379q 3 2015-9-30 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 typical source-drain diode forward voltage fig. 1 typical output characteristics n-channel 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 25c a 4.5v j 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 20s pulse width t = 150c a 4.5v j 10 100 45678910 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 15v 20s pulse width ds 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a
? auirf7379q 4 2015-9-30 fig 5. normalized on-resistance vs. temperature fig 6. typical on-resistance vs. drain current ? fig. 7 typical on-resistance vs. gate voltage n-channel ? ? 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) v = 10v gs a i = 4.0a d
? auirf7379q 5 2015-9-30 fig 8. typical capacitance vs. drain-to-source voltage fig 9. typical gate charge vs. gate-to-source voltage ? fig 10. maximum effective transient thermal impedance, junction-to-ambient n-channel 0 200 400 600 800 1000 110100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
? auirf7379q 6 2015-9-30 p-channel fig. 12 typical output characteristics fig. 13 typical transfer characteristics fig. 14 typical source-drain diode forward voltage fig. 11 typical output characteristics 1 10 100 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20s pulse width t = 25c j 1 10 100 0.1 1 10 100 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v j 1 10 100 45678910 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -15v 20s pulse width ds 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 1.5 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v)
? auirf7379q 7 2015-9-30 ? fig 15. normalized on-resistance vs. temperature fig 16. typical on-resistance vs. drain current fig. 17 typical on-resistance vs. gate voltage p-channel 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -3.0a d
? auirf7379q 8 2015-9-30 fig 20. maximum effective transient thermal impedance, junction-to-ambient p-channel fig 18. typical capacitance vs. drain-to-source voltage fig 19. typical gate charge vs. gate-to-source voltage 0 200 400 600 800 1000 110100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
? auirf7379q 9 2015-9-30 ? so-8 part marking information so-8 package outline (dimensions are shown in millimeters (inches) e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters in c h es min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c ab e1 a a1 8x b c 0.10 [.004] 43 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. n o tes: 1. d im en sio n in g & to leran c in g per asm e y14.5m -1994. 2. controlling dim ension: millimeter 3. dimensions are shown in millimeters [inches]. 5 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. 6 d im en sio n d o es n o t in c lu d e m o ld pro tru sio n s. m o ld pro tru sio n s n o t to exc eed 0.25 [.010]. 7 d im en sio n is th e len g th o f lead fo r so ld erin g to a s u b s t r a t e . m o ld pro tru sio n s n o t to exc eed 0.15 [.006]. 8x 1.78 [.070]
? auirf7379q 10 2015-9-30 so-8 tape and reel ( dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541.
? auirf7379q 11 2015-9-30 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level so-8 msl1 esd machine model n ch: class m2 (+/- 150v) ? aec-q101-002 human body model ? n ch: class h1a (+/- 500v) ? aec-q101-001 charged device model n ch: class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes p ch: class m2 (+/- 150v) ? p ch: class h0 (+/- 250v) ? p ch: class c5 (+/- 2000v) ? published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 9/30/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. 3/10/2014 ?? added "logic level gate drive" bullet in the features section on page 1 ?? updated data sheet with new ir corporate template ? highest passing voltage.

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